Product Description:
The AOD403/AOI403 is a 30V P-Channel MOSFET designed for high current load applications, utilizing advanced trench technology for superior performance. With a robust thermal resistance, this device is ideal for demanding environments where reliability is crucial.
Key Features:
Drain-Source Voltage (VDS): -30V
Gate-Source Voltage (VGS): ±25V
Drain Current (ID): Up to -70A at VGS=-20V
On-State Resistance (RDS(ON)):
Thermal Resistance (RθJC): 2.5°C/W typical at TC=25°C
Storage Temperature: -55°C to 175°C
Power Dissipation: 125W continuous at TC=25°C
Electrical Characteristics:
Gate Threshold Voltage (VGS(th)): -1.5V to -3.5V
Static Drain-Source On-Resistance (RDS(ON)): 5.6mΩ to 8.5mΩ
Input Capacitance (Ciss): 2310pF to 3500pF
Output Capacitance (Coss): 410pF to 760pF
Gate Resistance (Rg): 1.9Ω to 5.7Ω
Turn-on Delay Time (td(on)): Typically 16ns
Turn-off Delay Time (td(off)): Typically 45ns
Therapeutic Characteristics:
Junction-to-Ambient Thermal Resistance (RθJA): 16°C/W to 41°C/W
Avalanche Energy: Up to 12mJ
This MOSFET is 100% UIS tested and comes with a 100% Rg tested guarantee for your peace of mind. It is designed to meet the needs of high-efficiency power conversion systems.
Package Options: TO252 and TO251A, both offering excellent thermal performance and reliability.